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Q2N2222 Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 –55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
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CASE 29–11, STYLE 17 TO–92 (TO–226AA)
COLLECTOR 1 2 BASE 3 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage www.DataSheet4U.com (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO — — IEBO ICEO IBEX — — — 0.01 10 10 10 20 nAdc nAdc nAdc 40 75 6.0 — — — — 10 Vdc Vdc Vdc nAdc µAdc
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Publication Order Number: Q2N2222
Q2N2222
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector–Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) — — VBE(sat) 0.6 — 1.2 2.0 0.3 1.0 Vdc — — — — 300 — — Vdc —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) www.DataSheet4U.com (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT Cobo Cibo hie 2.0 0.25 hre — — hfe 50 75 hoe 5.0 25 rb′Cc NF — — 35 200 150 4.0 ps dB 300 375 mmhos 8.0 4.0 — 8.0 1.25 X 10–4 300 — — — 8.0 25 MHz pF pF kΩ
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = –2.0 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) Ad ) (Fi (Figure 2) td tr ts tf — — — — 10 25 225 60 ns ns ns ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
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Q2N2222
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ā30 V +16 V 0 -ā2 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ 200 +16 V 0 < 2 ns CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1k 1N914 -ā4 V +ā30 V 200
-14 V
< 20 ns
CS* < 10 pF
Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0
TJ = 125°C
25°C -55°C VCE = 1.0 V VCE = 10 V 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k
Figure 3. DC Current Gain
1.0 www.DataSheet4U.com 0.8 0.6 0.4 0.2 0 0.005 IC = 1.0 mA 10 mA 150 mA
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
500 mA
0.01
0.02 0.03
0.05
0.1
0.2
0.3 0.5 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
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Q2N2222
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C
t, TIME (ns)
tf
5.0 7.0 10
20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
300
500
Figure 5. Turn–On Time
10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = 1.0 mA, RS = 150 Ω 500 µA, RS = .