WTM1624
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Description
The WTM162...
WTM1624
NPN EPITAXIAL PLANAR
TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Description
The WTM1624 applies to voltage
regulators, relay drivers,lamp drivers,and electrical equipment.
SOT-89
Features
Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide ASO
Absolute Maximum Ratings at TA = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) (Note1) Total Power Dissipation
Note 1: Single pulse, PW=10ms
Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD
Ratings +150 -55~+150 60 50 6 3 6 0.5
Unit
V V V A A W
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Electrical Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob tstg tf Min. 60 50 6 100 -
(Ta = 25 , unless otherwise stated) Typ. Max. Unit Test Conditions V IC=10uA , IE=0 V IC=1mA, IB=0 V IE=10uA ,IC=0 1 uA VCB=40V, IE=0 1 uA VEB=4V, IC=0 0.19 0.5 V IC=2A, IB=100mA 0.94 1.2 V IC=2A, IB=100mA 560 VCE=2V, IC=100mA 150 MHz VCE=10V, IC=50mA 25 pF VCB=10V, IE=0, f=1MHz 650 ns See test circuit 35 ns
*Measured under pulse condition. Pulse widthfi 380fl s, Duty Cyclefi 2%
Classification of h FE
Rank Range R 100 - 200 S 140 - 280 T 200 - 400 U 280 - 560
WEITRON
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28-Dec-07
WTM1624
Test Circuit(Unit: resistance: , capacitance: F)
Characteristics Curve
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