WTM2222A

WTM2222A NPN Epitaxial Planar Transistors P b Lead(Pb)-Free SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER Features: * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With PNP Type WTM2907A 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Device Marking WTM2222A = 2222A www.DataSheet4U.com , 1P Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 75 40 6.0 0.6 1.2 +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=10µA Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO Min 75 40 6.0 Typ Max 10 10 50 Unit V V V nA nA nA Collector-Emitter Breakdown Voltage IC=10mA Emitter-Base Breakdown Voltage IE=10µA Collector Cutoff Current VCB=60V Collector Cutoff Current VCB=60V, VEB(off) =3.0V Collector Cutoff Current VEB =3.0V WEITRON http://www.weitron.com.tw 1/4 06-Apr-06 WTM2222A ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=10V, I C =100µA VCE=10V, I C =1.0mA VCE=10V, I C =10mA VCE=10V, I C =150mA VCE=10V, I C =500mA VCE=1.0V, IC =150mA Collector-Emitter Saturation Voltage IC=150mA, I B=15mA IC=500mA, I B=50mA Base-Emitter Saturation Voltage IC=150mA, I B=15mA IC=500mA, I B=50mA 1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% h...