WTM649A

WTM649A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Limits -180 -160 -5 -1.5 -3 1 150 -55 to +150 Unit V V V A W ˚C ˚C www.DataSheet4U.com Device Marking WTM649A=649A ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-1mA, IE=0 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO -180 -160 -5 - - -10 V V V µA Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-1mA, IC=0 Collector Cutoff Current VCB=-160V, IE=0 WEITRON http://www.weitron.com.tw 1/4 01-Aug-05 WTM649A ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-5V, IC=-150mA VCE=-5V, IC=-500mA Collector-Emitter Saturation Voltage IC=-600mA, IB=-50mA Base-Emitter Saturation Voltage VCE=-5V, IC=-150mA 1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% hFE1 hFE2 VCE(sat) VBE(on) 60 30 - - 200 -1 -1.5 V V DYNAMIC CHARACTERISTICS Transition Frequency www.DataSheet4U.com VCE=-5V, IC=-150mA, f=100MHz Output Capacitance VCB=-10V, f=1MHz fT Cob 140 27 MHz pF CLASSIFICATION OF hFE1 Rank hFE1 B 60-120 C 100-200 WEITRON http://www.weitr...