WTM669A

WTM669A NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Limits 180 160 5 1.5 3 1 150 -55 to +150 Unit V V V A W ˚C ˚C www.DataSheet4U.com Device Marking WTM669A=669A ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=1mA, I E=0 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO 180 160 5 - - 10 V V V µA Collector-Emitter Breakdown Voltage IC=10mA, I B=0 Emitter-Base Breakdown Voltage IE=1mA, I C=0 Collector Cutoff Current VCB=160V, I E=0 WEITRON http://www.weitron.com.tw 1/4 01-Aug-05 WTM669A ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=5V, I C=150mA VCE=5V, I C=500mA Collector-Emitter Saturation Voltage IC=600mA, I B=50mA Base-Emitter Saturation Voltage VCE=5V, I C=150mA 1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% hFE1 hFE2 VCE(sat) VBE(on) 60 30 - - 200 1 1.5 V V DYNAMIC CHARACTERISTICS Transition Frequency www.DataSheet4U.com VCE=5V, I C=10mA, f=100MHz Output Capacitance VCB=10V, f=1MHz fT Cob 140 14 MHz pF CLASSIFICATION OF hFE1 Rank hFE1 B 60-120 C 100-200 WEITRON http://www.weitron.com.tw 2/4 01...