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K4M56323PG-G Dataheets PDF



Part Number K4M56323PG-G
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 2M x 32Bit x 4 Banks Mobile SDRAM
Datasheet K4M56323PG-G DatasheetK4M56323PG-G Datasheet (PDF)

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -..

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K4M56323PG-FE K4M56323PG-G K4M56323PG-C


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