D1046

Ordering number:ENN677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic. Package Dimensions unit:mm 2022A [2SB816/2SD1046] 3.5 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.3 1.2 15.0 20.0 ( ) : 2SB816 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions 1.4 Ratings (–)150 (–)120 (–)6 (–)8 (–)12 80 150 –40 to +150 Unit V V V A A W ˚C ˚C www.DataSheet4U.com Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, VCE=(–)5V, IC=(–)1A IC=(–)5A 60* 20 15 (220) 160 MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 200* Unit mA mA VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz * : The 2SB816/2SD1046 are classified by 1A hFE as follows : Rank hFE D 60 t...