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K4R761869A

Samsung semiconductor

576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM www.DataSheet4U.com Version 1.4...


Samsung semiconductor

K4R761869A

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K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM www.DataSheet4U.com Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R761869A Change History Direct RDRAM™ Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb D-die Version 1.4 Version 1.41(Jan. 2004) - Add the part numbers for lead free package - Correct the Package total thickness www.DataSheet4U.com Page 0 Version 1.41 Jan. 2004 K4R761869A Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 576Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 32M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1200 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to 0.833ns per two bytes (6.7ns per sixteen bytes). The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32 banks support up to four simultaneous transactions. System oriented ...




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