Power MOSFET
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30
IXFH/IXFM 3...
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30
IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30
V DSS
300 V 300 V 300 V
I
D25
35 A 40 A 40 A
R DS(on)
100 mW 85 mW 88 mW
trr £ 200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
VDSS V
DGR
VGS VGSM ID25
IDM
I
AR
EAR dv/dt
P D
TJ TJM Tstg TL Md Weight
Symbol
V DSS
VGS(th) IGSS IDSS
RDS(on)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
35N30 40N30 35N30 40N30 35N30 40N30
.
300
V
300
V
±20
V
±30
V
35
A
40
A
140
A
160
A
35
A
40
A
30
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
V GS
=
0
V,
I
D
=
250
mA
300
VDS = VGS, ID = 4 mA
2
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS V =0V
GS
TJ = 25°C
T J
=
125°C
VGS = 10 V, ID = 0.5 ID25
35N30 FH40N30
FM40N30
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V 4V
±100 nA
200 mA 1 mA
0.100 W 0.085 W 0.088 W
(TAB)
TO-204 AE (IXFM)
Package unavailable
G = Gate, S = Source,
G D
D = Drain, TAB = Drain
Features
International standard packages Low RDS (on) HDMOSTM process Rugg...
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