IXFH35N30

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 V DSS 300 V 300 V 300 V I D25 35 A 40 A 40 A R DS(on) 100 mW 85 mW 88 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 35N30 40N30 35N30 40N30 35N30 40N30 . 300 V 300 V ±20 V ±30 V 35 A 40 A 140 A 160 A 35 A 40 A 30 mJ 5 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V GS = 0 V, I D = 250 mA 300 VDS = VGS, ID = 4 mA 2 VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5 ID25 35N30 FH40N30 FM40N30 Pulse test, t £ 300 ms, duty cycle d £ 2 % V 4V ±100 nA 200 mA 1 mA 0.100 W 0.085 W 0.088 W (TAB) TO-204 AE (IXFM) Package unavailable G = Gate, S = Source, G D D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process Rugg...