2SC3856
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)
Application : Audio and General Pur...
2SC3856
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1492)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO 200 V
VCEO 180 V
VEBO 6 V
IC 15 A
IB 4 A
PC
130(Tc=25°C)
W
Tj 150 °C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO IEBO
VCB=200V VEB=6V
100max 100max
µA µA
V(BR)CEO
IC=50mA
180min
V
hFE
VCE=4V, IC=3A
50min∗
VCE(sat)
IC=5A, IB=0.5A
2.0max
V
fT
VCE=12V, IE=–0.5A
20typ
MHz
COB
VCB=10V, f=1MHz
300typ
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
a ø3.2±0.1 b
2 3 1.05 +-00..12
0.65
+0.2 -0.1
20.0min 4.0max
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
40 4 10 10 –5 1
IB2 ton tstg tf (A) (µs) (µs) (µs)
–1 0.5typ 1.8typ 0.6typ
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
Collector Current IC(A) 1A
I C– V CE Characteristics (Typical)
15
700mA
500mA
300mA
200mA 10
100mA
5 50mA
IB=20mA
0 0 12 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 15
Collector Current IC(A) 215˚25C˚ (CC(aCsaeseTeTempm)p) –30˚C (Case Temp)
2 10
1
IC=10A 5A 0 0 0.5 1.0 1.5 2.0
Base C...
