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STGD7NB60S

ST Microelectronics

N-CHANNEL IGBT

® STGD7NB60S N-CHANNEL 7A - 600V - DPAK Power MESH™ IGBT TYPE STGD7NB60S s V CES 600 V V CE(sat ) < 1.6 V IC 7 A s...


ST Microelectronics

STGD7NB60S

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® STGD7NB60S N-CHANNEL 7A - 600V - DPAK Power MESH™ IGBT TYPE STGD7NB60S s V CES 600 V V CE(sat ) < 1.6 V IC 7 A s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 1 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, SGS-Thomson has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 ± 20 15 7 60 55 0.4 -65 to 150 -40 to 150 Un it V V V A A A W W /o C o o C C () Pulse width limited by safe operating area October 1998 1/8 STGD7NB60S THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.27 100 1.5 o o C/W C/W o C/W ELECTRICAL CHARACTERIS...




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