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K4M51323LC-L

Mobile-SDRAM

Description

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES VDD/VDDQ = 2.5V/2.5V LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. ...

Samsung semiconductor

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