9N50C Datasheet | FQI9N50C





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Part Number 9N50C
Description FQI9N50C
Manufacture Fairchild Semiconductor
Total Page 9 Pages
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Features: FQB9N50C/FQI9N50C QFET FQB9N50C/FQI9N50 C 500V N-Channel MOSFET General Descrip tion These N-Channel enhancement mode p ower field effect transistors are produ ced using Fairchild’s proprietary, pl anar stripe, DMOS technology. This adva nced technology has been especially tai lored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effici ency switched mode power supplies, acti ve power factor correction, electronic lamp ballasts based on half bridge topo logy. TM Features • • • • • • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switchi ng 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings S ymbol VDSS ID www.DataSheet4U.com IDM V GSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Paramet.

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FQB9N50C/FQI9N50C
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
www.DataSheet4U.com
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB9N50C/FQI9N50C
500
9
5.4
36
± 30
360
9
13.5
4.5
135
1.07
-55 to +150
300
Typ Max
-- 0.93
-- 40
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003

                    
     






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