STF42N65M5

STB42N65M5, STF42N65M5 STP42N65M5, STW42N65M5 Datasheet N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Features TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested ID 33 A Applications G(1) S(3) Switching applications Description AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status links STB42N65M5 STF42N65M5 STP42N65M5 STW42N65M5 DS6033 - Rev 5 - March 2024 For further information contact your local STMicroelectronics sales office. www.st.com STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value D²PAK, TO-220, TO-247 TO-220FP VGS Gate-source voltage ±25 Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C 33 20.8 33(1) 20.8 (1) IDM(2) Drain current (pulsed) 132 132 PTOT Total power dissipation at TC = 25 °C 190 40 dv/dt(3) Peak dio...