Enhancement Mode Power MOSFET
SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ
RoHS Compliant Produc...
Description
SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.
FEATURES
z z z
Low Gate Charge Lower On-resistance Fast Switching Characteristic
PACKAGE DIMENSIONS
SOP-8
0.40 0.90 6.20 5.80 0.25
0.19 0.25
45
o
0.375 REF
3.80 4.00
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
0 o 8
o
1.35 1.75
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Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg
Ratings -30 ±12 -6.1 -5.1 -60 2.5 -55 ~ +150 0.02
Unit V V A A A W ℃ W/℃
Total Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
THERMAL DATA
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rθj-amb
Value 50
Unit ℃/W
01-June-2005 Rev. A
Page 1 of 4
SSG4403
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ
P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Curre...
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