Document
Elektronische Bauelemente
N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.4A, -30V,RDS(ON) 20m£[
SSG4505
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
The SSG4505 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.35 0.49 1.27Typ.
45
6.20 5.80 0.25
o
0.375 REF
3.80 4.00
4.80 5.00
0.10~0.25
Features
* Simple Drive Requirement * Lower On-Resistance
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1 8
D1 7
D2 6
D2 5
D1 D2
* Fast Switching Performance
Date Code
4505SS
G2 G1 S1 S2
1 S1
2 G1
3 S2
4 G2
Absolute Maximum Ratings
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Parameter
Symbol
VDS VGS 30
±20
o
Ratings
-30
±20 -8.4 -6.7 -30 2.0 0.016
Unit
V V A A A W
W/ C
o o
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3
ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o
10 7.9 30
3
T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max. Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2008 Rev. B
Page 1 of 7
Elektronische Bauelemente
N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.4A, -30V,RDS(ON) 20m£[
SSG4505
Enhancement Mode Power Mos.FET
Electrical Characteristics N Channel( Tj=25 C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC)
o
Unless otherwise specified)
Typ.
_
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS
Min.
30
_
Max.
_ _
Unit
V V/oC V nA uA uA
Test Condition
VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=6A
o
0.02
_ _ _ _ _ _
1.0
_ _ _ _
3.0
±100
1 25 14
Drain-Source Leakage Current (Tj=70 C )
2
o
Static Drain-Source On-Resistance
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
m£[
_ _ _ _ _ _ _ _ _ _ _
20
65
_ _
VGS=4.5V, ID=4A
Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time
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23 6 14 14 10 36 17 1770 430 350 14
nC
ID=9A VDS=24V VGS=4.5V
_ VDD=15V
_
ID=1 A nS VGS=10V RG=3.3 £[ RD=15 £[
_ _
Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
2830
_ _
pF
VGS=0V VDS=25V f=1.0MHz
_
_
S
VDS=10V, ID=9A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
VSD Trr Qrr
Min.
_ _ _
Typ.
_
Max.
1.2
_ _
Unit
V
Test Condition
IS=1.7A ,VGS=0V IS=9A,V GS=0V dl/dt=100A/us
Reverse Recovery Time Reverse Recovery Charge
31 .