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SSG4505 Dataheets PDF



Part Number SSG4505
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Datasheet SSG4505 DatasheetSSG4505 Datasheet (PDF)

Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.4A, -30V,RDS(ON) 20m£[ SSG4505 Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4505 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC .

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Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.4A, -30V,RDS(ON) 20m£[ SSG4505 Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4505 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 Features * Simple Drive Requirement * Lower On-Resistance 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 * Fast Switching Performance Date Code 4505SS G2 G1 S1 S2 1 S1 2 G1 3 S2 4 G2 Absolute Maximum Ratings www.DataSheet4U.com Parameter Symbol VDS VGS 30 ±20 o Ratings -30 ±20 -8.4 -6.7 -30 2.0 0.016 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o 10 7.9 30 3 T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 1 of 7 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.4A, -30V,RDS(ON) 20m£[ SSG4505 Enhancement Mode Power Mos.FET Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) o Unless otherwise specified) Typ. _ Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Max. _ _ Unit V V/oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=6A o 0.02 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 14 Drain-Source Leakage Current (Tj=70 C ) 2 o Static Drain-Source On-Resistance RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs m£[ _ _ _ _ _ _ _ _ _ _ _ 20 65 _ _ VGS=4.5V, ID=4A Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time www.DataSheet4U.com 23 6 14 14 10 36 17 1770 430 350 14 nC ID=9A VDS=24V VGS=4.5V _ VDD=15V _ ID=1 A nS VGS=10V RG=3.3 £[ RD=15 £[ _ _ Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2830 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=9A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ _ Typ. _ Max. 1.2 _ _ Unit V Test Condition IS=1.7A ,VGS=0V IS=9A,V GS=0V dl/dt=100A/us Reverse Recovery Time Reverse Recovery Charge 31 .


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