Enhancement Mode Power MOSFET
SSG4565
Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[
Enhancement Mode...
Description
SSG4565
Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
The SSG4565 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.35 0.49 1.27Typ.
45
6.20 5.80 0.25
o
0.375 REF
3.80 4.00
4.80 5.00
0.10~0.25
Features
* Simple Drive Requirement * Lower On-resistance
D1 8 D1 7 D2 6 D2 5
D1
0 o 8
o
1.35 1.75
Dimensions in millimeters
* Fast Switching Performance
Date Code
D2
4565SS
G1 G2
1 S1
2 G1
3 S2
4 G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current
1 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings N-Channel P-Channel
40
±20 7.6 6 30 2 0.016
Unit
V V A A A W
W/ C
o o
-40
_ +20
-6.5 -5.2 -30
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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