Document
SSG4565
Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.40 0.90 0.19 0.25
The SSG4565 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.35 0.49 1.27Typ.
45
6.20 5.80 0.25
o
0.375 REF
3.80 4.00
4.80 5.00
0.10~0.25
Features
* Simple Drive Requirement * Lower On-resistance
D1 8 D1 7 D2 6 D2 5
D1
0 o 8
o
1.35 1.75
Dimensions in millimeters
* Fast Switching Performance
Date Code
D2
4565SS
G1 G2
1 S1
2 G1
3 S2
4 G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current
1 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings N-Channel P-Channel
40
±20 7.6 6 30 2 0.016
Unit
V V A A A W
W/ C
o o
-40
_ +20
-6.5 -5.2 -30
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 7
SSG4565
Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m £[ P Channel 6.5A, 40V,RDS(ON) 33m £[
Enhancement Mode Power Mos.FET
o
Electrical Characteristics N- Channel (Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance
2 2
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS
Min.
40
_
Typ.
_
Max.
_ _
Unit
V V/ oC V nA uA uA
Test Condition
VGS=0V, ID=250uA Reference to 25 oC,ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=40V,VGS=0 VDS=32V,VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A
0.03
_ _ _ _ _ _
1.0
_ _ _ _
3.0
±100
1 25 25 32
27
_ _
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
_ _ _ _ _ _ _ _ _ _ _
m£[
Total Gate Charge
17 4 10 11 8 30 11 1400 250 170 12
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time
www.DataSheet4U.com
2
nC
ID=7A VDS=32V VGS=4.5V
_
_ _ _
VDD=20V ID=1A nS VGS=10V RG=3.3£[ RD=20 £[
Fall Time
Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
2400
_ _
pF
VGS=0V VDS=25V f=1.0MHz
_
_
S
VDS=10V, ID=7A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
VSD
Min.
_ _
Typ.
_
Max.
1.2
_
Unit
V
Test Condition
IS=1.7A, VGS=0V. Is=7A, VGS=0V dl/dt=100A/us
Reverse Recovery Time
2
Trr
Qrr
26
ns
Reverse Recovery Charge
_
21
_
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width¡Ø 300us, dutycycle¡Ø2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 7
SSG4565
Elektronische Bauelemente
N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[
Enhancement Mode Power Mos.FET
o
Electrical Characteristics P-Channel( Tj=25 C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance
2 o
Unless otherwise specified)
Typ.
_
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS
Min.
-40
_
Max.
_ _
Unit
V V/ C V nA uA uA
o
Test Condition
VGS=0V, ID=-250uA Reference to 25 C ,ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V VDS=-40V,VGS=0 VDS=-32V,VGS=0 VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A
o
-0.03
_ _ _ _ _ _
-1.0
_ _ _ _
-3.0
±100
-1 -25 33 42
32
_ _
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
_ _ _ _ _ _ _ _ _ _ _
m£[
Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www.DataSheet4U.com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
20 4 10 11 7 67 43 1440 250 190 10
nC
ID=-6A VDS=-32V VGS=-4.5V
_
_ _ _
VDS=-20V ID=-1A nS VGS=-10V RG=3.3 £[ RD=20£[
2300
_ _
pF
VGS=0V VDS=-25V f=1.0MHz
_
_
S
VDS=-10V, ID=-6A
Source-Drain Diode
Parameter
Forward On Voltage 2 Reverse Recovery Time
2
Symbol
VSD Trr
Qrr
Min.
_ _
Typ.
_
Max.
-1.2 _
_
Unit
V
Test Condition
IS=-1.7A, VGS=0V. Is=-6A, VGS=0V
dl/dt=100A/us
27
23
ns
Reverse Recovery Charge
_
nC
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width¡Ø 300us, dutycycle¡Ø2%. 3.Surface mounted on 1 inc.