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SSG4575

SeCoS Halbleitertechnologie GmbH

Enhancement Mode Power MOSFET

SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 6A, 60V,R DS(ON) 36m...


SeCoS Halbleitertechnologie GmbH

SSG4575

File DownloadDownload SSG4575 Datasheet


Description
SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[ SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 0 o 8 o 1.35 1.75 Features * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2 * Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www.DataSheet4U.com Gate-Source Voltage Symbol VDS VGS Ratings N-Channel 60 ±20 P-Channel -60 ±20 -4.2 -3.3 -30 2 Unit V V A A A W W/ C o o Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o 6 4.7 30 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 0.016 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.5 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Pag...




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