SSG4957

SSG4957 Elektronische Bauelemente -7.7A, -30V,RDS(ON) 24m £[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 6.20 5.80 0.25 3.80 4.00 0.40 0.90 0.19 0.25 45 o 0.375 REF 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Low on-resistance * Simple drive requirement D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D1 * Dual P MOSFET Package Date Code 4957SS G1 1 S1 2 G1 3 S2 4 G2 G1 S1 S1 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -7.7 - 6.1 -30 2 0.016 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSG4957 Elektronische Bauelemente -7.7A, -30V,RDS(ON) 24m £[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coef...