STT2602
Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Produ...
STT2602
Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2602 is universally used for all commercial-industrial applications.
Features
* Low On-Resistance * Capable of 2.5V Gate Drive
D D 5 S 4 6
D
REF. A A1 A2 c D E E1
Date Code
2602
G
1 D 2 D 3 G
S
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
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Parameter
Symbol
VDS VGS
Ratings
20
± 12
Unit
V V A A A W
W/ C
o o
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,
[email protected] Continuous Drain Current,
[email protected] Pulsed Drain Current
1,2 3 3
ID@TC=25 C ID@TC=70C IDM PD@TC=25 C
o o
o
6.3 5 30 2 0.016
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
3
Symbol Max.
Rthj-c
Ratings
62.5
Unit
o
C /W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
STT2602
Elektronische Bauelemente
o
6.3A, 20V,RDS(ON) 34m£[
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherw...