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STT2603

SeCoS Halbleitertechnologie GmbH

P-Channel Enhancement Mode Power MosFET

STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m £[ P-Channel Enhancement Mode Power Mos...


SeCoS Halbleitertechnologie GmbH

STT2603

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Description
STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m £[ P-Channel Enhancement Mode Power Mos.FET Description The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT2603 is universally used for all commercial industrial surface mount application . Features * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current (Note 3) Continuous Drain Current (Note 3) Pulsed Drain Current (Note 1,2) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings -20 ±12 -5 -4 -20 2 0.016 -55~+150 Unit V V A A A W W /e C e C Thermal Data Parameter Thermal Resistance Junction-ambient (Note 3) (Max) Symbol Rthj-a Ratings 62.5 Unit e C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2603 Elektronische Bauelemente -5A, -20V,RDS(ON) 65m£[ P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=...




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