STT2604

STT2604 Elektronische Bauelemente 5.5A, 3 0V,RDS(ON) 45m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. A A1 A2 c D E E1 Date Code 2604 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings www.DataSheet4U.com Parameter Symbol VDS VGS Ratings 30 ± 20 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,[email protected] Continuous Drain Current,[email protected] Pulsed Drain Current 1,2 3 3 ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o 5.5 4.4 20 2 0.016 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case 3 Symbol Max. Rthj-c Ratings 62.5 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2604 Elektronische Bauelemente o 5.5 A, 3 0V,RDS(ON) 45m£[ N-Channel Enhancement Mode Power Mos.FET ...