STT2605

STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current, (Note 3) Continuous Drain Current, (Note 3) Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings -30 ±20 -4.0 -3.3 -20 2.0 0.016 -55~+150 Unit V V A A A W W /e C e C Thermal Data Parameter Thermal Resistance Junction-ambient (Note 3) Symbol Rthj-a Ratings 62.5 Unit e C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m£[ P-Channel Enhancement Mode Power Mos.FET Electri...