STT2622

STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8£[ N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-industrial applications. Features * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter www.DataSheet4U.com Drain-Source Voltage Symbol VDS VGS Ratings 50 ±20 Unit V V mA mA A W W/ C o o Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 3 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o 520 410 1.5 0.8 0.006 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 150 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8 £[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unl...