STT2PF60L

P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STT2PF60L s s STT2PF60L VDSS 60 V RDS(on) <0.25 Ω ID 2A s TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs s CELLULAR www.DataSheet4U.com MARKING s SOT23-6L INTERNAL SCHEMATIC DIAGRAM STP6 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 60 60 ± 15 2 1.3 8 1.6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot () Pulse width limited by safe operating area. May 2002 . Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/6 STT2PF60L THERMAL DATA Rthj-amb Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max Max 78 ...