VNS3NV04D. 3NV04D Datasheet

3NV04D VNS3NV04D. Datasheet pdf. Equivalent


STMicroelectronics 3NV04D
® VNS3NV04D
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
RDS(on)
VNS3NV04D 120 m(*)
Ilim
3.5 A (*)
Vclamp
40 V (*)
(*)Per each device
n LINEAR CURRENT LIMITATION
)n THERMAL SHUT DOWN
t(sn SHORT CIRCUIT PROTECTION
cn INTEGRATED CLAMP
un LOW CURRENT DRAWN FROM INPUT PIN
dn DIAGNOSTIC FEEDBACK THROUGH INPUT
roPIN
Pn ESD PROTECTION
ten DIRECT ACCESS TO THE GATE OF THE
lePOWER MOSFET (ANALOG DRIVING)
on COMPATIBLE WITH STANDARD POWER
sMOSFET
bDESCRIPTION
OThe VNS3NV04D is a device formed by two
-monolithic OMNIFET II chips housed in a
)standard SO-8 package. The OMNIFET II are
t(sdesigned in STMicroelectronics VIPower M0-3
cTechnology: they are intended for replacement of
ustandard Power MOSFETS from DC up to 50KHz
rodBLOCK DIAGRAM
SO-8
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
lete P DRAIN1
bso OVERVOLTAGE
O CLAMP
DRAIN2
OVERVOLTAGE
CLAMP
INPUT1
GATE
CONTROL
GATE
CONTROL
INPUT2
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
LINEAR
CURRENT
LIMITER
OVER
TEMPERATURE
SOURCE1
SOURCE2
September 2013
DocID7396 Rev 4
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3NV04D Datasheet
Recommendation 3NV04D Datasheet
Part 3NV04D
Description VNS3NV04D
Feature 3NV04D; ® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ili.
Manufacture STMicroelectronics
Datasheet
Download 3NV04D Datasheet




STMicroelectronics 3NV04D
VNS3NV04D
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
VDSn
Drain-source Voltage (VINn=0V)
Internally Clamped
V
VINn
Input Voltage
Internally Clamped
V
IINn Input Current
+/-20
mA
RIN MINn Minimum Input Series Impedance
220
IDn Drain Current
Internally Limited
A
IRn Reverse DC Output Current
-5.5 A
VESD1 Electrostatic Discharge (R=1.5K, C=100pF)
4000
V
VESD2
Ptot
t(s)Tj
Tc
cTstg
Electrostatic Discharge on output pins only (R=330, C=150pF)
Total Dissipation at Tc=25°C
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
duCONNECTION DIAGRAM (TOP VIEW)
16500
4
Internally limited
Internally limited
-55 to 150
V
W
°C
°C
°C
lete ProSOURCE 1
soINPUT 1
bSOURCE 2
OINPUT 2
1
4
8 DRAIN 1
DRAIN 1
DRAIN 2
5 DRAIN 2
duct(s) -CURRENT AND VOLTAGE CONVENTIONS
lete ProIIN1 RIN1
ObsoVIN1
IIN2 RIN2
INPUT 1
DRAIN 1
ID1
ID2
VDS1
INPUT 2
DRAIN 2
VIN2
SOURCE 1
SOURCE 2
VDS1
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STMicroelectronics 3NV04D
VNS3NV04D
THERMAL DATA
Symbol
Rthj-lead
Rthj-amb
Parameter
Thermal Resistance Junction-lead (per channel)
Thermal Resistance Junction-ambient
MAX
MAX
Value
30
80(*)
Unit
°C/W
°C/W
(*) When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins of the relative
channel.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
(Per each device)
OFF
Symbol
t(s)VCLAMP
ucVCLTH
rodVINTH
PIISS
teVINCL
oleIDSS
ObsON
-Symbol
Obsolete Product(s)RDS(on)
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (VIN=0V)
Test Conditions
VIN=0V; ID=1.5A
VIN=0V; ID=2mA
VDS=VIN; ID=1mA
VDS=0V; VIN=5V
IIN=1mA
IIN=-1mA
VDS=13V; VIN=0V; Tj=25°C
VDS=25V; VIN=0V
Parameter
Static Drain-source On
Resistance
Test Conditions
VIN=5V; ID=1.5A; Tj=25°C
VIN=5V; ID=1.5A
Min Typ Max Unit
40 45 55
V
36 V
0.5 2.5 V
100 150 µA
6 6.8 8
-1.0 -0.3
V
30
µA
75
Min Typ Max Unit
120
m
240
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