Document
2SK3544
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3544
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 4.5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. www.DataSheet4U.com operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.25 Unit °C/W
4
1
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3544
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min ⎯ ±30 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ Max ±10 ⎯ Unit μA
Gate leakage current Gate–source breakdown voltage Drain cutoff current Drain–source breakdown voltage Gate threshold voltage Drain–source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time
IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON)
⎪Yfs⎪
VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A
V
μA
100
⎯
450 3.0
⎯
V V
Ω
5.0 0.4
⎯ ⎯ ⎯
0.29 5.8 1600 17 220 28
3.0
⎯
S
Ciss Crss Coss tr 10 V VGS 0V
10 Ω
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
pF
⎯
ID = 6 A
⎯ ⎯ ⎯
ns
⎯
Output
Turn-on time Switching time Fall time
ton
⎯
RL = 33.3 Ω VDD ∼ − 200 V
⎯ ⎯
45
tf Duty < = 1%, tw = 10 μs
⎯
10
⎯ ⎯
⎯ ⎯ ⎯
Turn-off time Total gate charge Gate–source charge Gate–drain charge
toff Qg Qgs Qgd
56 34 19 15
VDD ∼ − 360 V, VGS = 10 V, ID = 13 A
⎯ ⎯
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition ⎯ ⎯ Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ Max Unit
www.DataSheet4U.com Continuous drain reverse current (Note 1)
IDR IDRP VDSF trr Qrr
13 52
−1.7 ⎯ ⎯
A A V ns
μC
Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge
(Note 1)
IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/μs
300 3.4
Marking
Part No. (or abbreviation code)
K3544
Lot No. A line indicates a Lead (Pb)-Free Finish
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2SK3544
ID – VDS
10 Common source Tc = 25°C Pulse test 15 6 7.0 20 10 7.5 7.25 16 15 10 8.5
ID – VDS
8.25 8 12 7.5 8 7 4 6.5 VGS = 6 V Common source Tc = 25°C Pulse test
8
Drain current ID (A)
4
6.5
2
VGS = 6.0 V
0 0
Drain current ID (A)
10
2
4
6
8
0 0
10
20
30
40
50
Drain–source voltage
VDS (V)
Drain–source voltage
VDS (V)
ID – VGS
30 Common source VDS = 20 V Pulse test 10
VDS – VGS
Common source Tc = 25°C Pulse test
VDS (V)
25
8
Drain current ID (A)
20
Drain–source voltage
6 ID = 13 A 4
10 100 Tc = −55°C
2
6 3
0 3
6
9
12
0 0
4
8
12
16
20
www.DataSheet4U.com
Gate–source voltage
VGS (V)
Gate–source voltage
VGS (V)
⎪Yfs⎪ – ID
(Ω)
50 10 Common source Tc = 25°C Pulse test
RDS (ON) – ID
(S)
Common source VDS = 20 V Pulse test 10 Tc = −55°C 25
100
Drain–source ON-resistance RDS (ON)
Forward transfer admittance ⎪Yfs⎪
1
1
VGS = 10 V 15
0.1 0.1
1
10
100
0.1 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
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2SK3544
RDS (ON) – Tc
1.0 Common source 0.8 6 VGS = 10 V Pulse test ID = 13 A 100 Common source Tc = 25°C Pulse test 10
IDR – VDS
Drain–source ON-resistance RDS (ON) (Ω)
0.6
3
0.4
Drain reverse current IDR
(A)
1
10 3 5 1 VGS = 0, −1 V −0.6 −0.8 −1 −1.2
0.2
0 −80
−40
0
40
80
120
160
0.1 0
−0.2
−0.4
Case temperature Tc
(°C)
Drain–source voltage
VDS (V)
Capacitance – VDS
10000 6
Vth – Tc
Common source VDS = .