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2SK3544 Dataheets PDF



Part Number 2SK3544
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOS Type FET
Datasheet 2SK3544 Datasheet2SK3544 Datasheet (PDF)

2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain cu.

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2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 4.5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. www.DataSheet4U.com operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.25 Unit °C/W 4 1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2007-10-01 2SK3544 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min ⎯ ±30 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ Max ±10 ⎯ Unit μA Gate leakage current Gate–source breakdown voltage Drain cutoff current Drain–source breakdown voltage Gate threshold voltage Drain–source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A V μA 100 ⎯ 450 3.0 ⎯ V V Ω 5.0 0.4 ⎯ ⎯ ⎯ 0.29 5.8 1600 17 220 28 3.0 ⎯ S Ciss Crss Coss tr 10 V VGS 0V 10 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ pF ⎯ ID = 6 A ⎯ ⎯ ⎯ ns ⎯ Output Turn-on time Switching time Fall time ton ⎯ RL = 33.3 Ω VDD ∼ − 200 V ⎯ ⎯ 45 tf Duty < = 1%, tw = 10 μs ⎯ 10 ⎯ ⎯ ⎯ ⎯ ⎯ Turn-off time Total gate charge Gate–source charge Gate–drain charge toff Qg Qgs Qgd 56 34 19 15 VDD ∼ − 360 V, VGS = 10 V, ID = 13 A ⎯ ⎯ nC Source–Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition ⎯ ⎯ Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ Max Unit www.DataSheet4U.com Continuous drain reverse current (Note 1) IDR IDRP VDSF trr Qrr 13 52 −1.7 ⎯ ⎯ A A V ns μC Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/μs 300 3.4 Marking Part No. (or abbreviation code) K3544 Lot No. A line indicates a Lead (Pb)-Free Finish 2 2007-10-01 2SK3544 ID – VDS 10 Common source Tc = 25°C Pulse test 15 6 7.0 20 10 7.5 7.25 16 15 10 8.5 ID – VDS 8.25 8 12 7.5 8 7 4 6.5 VGS = 6 V Common source Tc = 25°C Pulse test 8 Drain current ID (A) 4 6.5 2 VGS = 6.0 V 0 0 Drain current ID (A) 10 2 4 6 8 0 0 10 20 30 40 50 Drain–source voltage VDS (V) Drain–source voltage VDS (V) ID – VGS 30 Common source VDS = 20 V Pulse test 10 VDS – VGS Common source Tc = 25°C Pulse test VDS (V) 25 8 Drain current ID (A) 20 Drain–source voltage 6 ID = 13 A 4 10 100 Tc = −55°C 2 6 3 0 3 6 9 12 0 0 4 8 12 16 20 www.DataSheet4U.com Gate–source voltage VGS (V) Gate–source voltage VGS (V) ⎪Yfs⎪ – ID (Ω) 50 10 Common source Tc = 25°C Pulse test RDS (ON) – ID (S) Common source VDS = 20 V Pulse test 10 Tc = −55°C 25 100 Drain–source ON-resistance RDS (ON) Forward transfer admittance ⎪Yfs⎪ 1 1 VGS = 10 V 15 0.1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2007-10-01 2SK3544 RDS (ON) – Tc 1.0 Common source 0.8 6 VGS = 10 V Pulse test ID = 13 A 100 Common source Tc = 25°C Pulse test 10 IDR – VDS Drain–source ON-resistance RDS (ON) (Ω) 0.6 3 0.4 Drain reverse current IDR (A) 1 10 3 5 1 VGS = 0, −1 V −0.6 −0.8 −1 −1.2 0.2 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 Case temperature Tc (°C) Drain–source voltage VDS (V) Capacitance – VDS 10000 6 Vth – Tc Common source VDS = .


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