CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION...
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT N-Channel Enhancement Mode Field Effect
Transistor
VOLTAGE 30 Volts
APPLICATION
* Interfacing, switching (30V, 100mA)
2SK3541PT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel
0.8 0.22
(2)
SOT-723
(S)
(3)
(D)
(1)
0.4 1.2 0.4
(G)
CONSTRUCTION
Silicon N-Channel MOSFET
0.32 0.8
0.22
0.13 0.15Max.
D
0.5 0.5±0.5
CIRCUIT
1G
S
3
2
TA = 25°C unless otherwise noted
Dimensions in millimeters
SOT-723
Absolute Maximum Ratings
Symbol Parameter
2SK3541PT
Units
VDSS VGSS ID IDR
Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed (Note1) Reverse Drain Current - Continuous - Pulsed (Note1)
30
V V mA mA mA mA mW °C °C
2004-06
±20
100 400 100 400 150 150 -55 to 150
PD TJ TSTG
Power Dissipation (Note2) Operating Temperature Range Storage Temperature Range
Note: 1. Pw < 10uA , Duty cycle < 1% 2. With each pin mounted on the recommended land
RATING CHARACTERISTIC CURVES ( 2SK3541PT )
Electrical Characteristics T
Symbol Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS IGSSF IGSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = 10µA VDS = 30 V, VGS = 0 V TC=125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
30 1 0.5 1 -1
V µA mA µA µA
Gate - Body Leakage, Forward Gate - Body Leakag...