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2SK3541PT

Chenmko Enterprise

N-Channel Enhancement Mode Field Effect Transistor

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION...


Chenmko Enterprise

2SK3541PT

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Interfacing, switching (30V, 100mA) 2SK3541PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel 0.8 0.22 (2) SOT-723 (S) (3) (D) (1) 0.4 1.2 0.4 (G) CONSTRUCTION Silicon N-Channel MOSFET 0.32 0.8 0.22 0.13 0.15Max. D 0.5 0.5±0.5 CIRCUIT 1G S 3 2 TA = 25°C unless otherwise noted Dimensions in millimeters SOT-723 Absolute Maximum Ratings Symbol Parameter 2SK3541PT Units VDSS VGSS ID IDR Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed (Note1) Reverse Drain Current - Continuous - Pulsed (Note1) 30 V V mA mA mA mA mW °C °C 2004-06 ±20 100 400 100 400 150 150 -55 to 150 PD TJ TSTG Power Dissipation (Note2) Operating Temperature Range Storage Temperature Range Note: 1. Pw < 10uA , Duty cycle < 1% 2. With each pin mounted on the recommended land RATING CHARACTERISTIC CURVES ( 2SK3541PT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10µA VDS = 30 V, VGS = 0 V TC=125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 1 0.5 1 -1 V µA mA µA µA Gate - Body Leakage, Forward Gate - Body Leakag...




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