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MBM29DL323BD Dataheets PDF



Part Number MBM29DL323BD
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation
Datasheet MBM29DL323BD DatasheetMBM29DL323BD Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD s FEATURES -80/90/12 • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3..

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD s FEATURES -80/90/12 • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. www.DataSheet4U.com MBM29DL32XTD/MBM29DL32XBD +0.3 V –0.3 V +0.6 V –0.3 V VCC = 3.3 V VCC = 3.0 V 80 — 80 80 30 — 90 90 90 35 — 12 120 120 50 Ordering Part No. Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 57-ball plastic FBGA Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-57P-M01) Em\edded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. MBM29DL32XTD/BD-80/90/12 (Continued) • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 57-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture Eight 4K word and sixty-three 32K word sectors in word mode Eight 8K byte and sixty-three 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • Hidden ROM (Hi-ROM) region 64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) • WP/ACC input pin At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status At VIH, allows removal of boot sector protection At VACC, increases program performance • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion www.DataSheet4U.com • Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. • Low VCC write inhibit ≤ 2.5 V • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector group protection Hardware method disables any combination of sector groups from program or erase operations • Sector Group Protection Set function by Extended sector group protection command • Fast Programming Function by Extended Command • Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash Memory Interface) 2 MBM29DL32XTD/BD-80/90/12 s GENERAL DESCRIPTION The MBM29DL32XTD/BD are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The MBM29DL32XTD/BD are offered in a 48-pin TSOP(I) and FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL32XTD/BD are organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. In the MBM29DL32XTD/BD, a new design concept is implemented, so called “Sliding Bank Architecture”. Under this concept, the MBM29DL32XTD/BD can be produced a series of devices with different Bank 1/Bank 2 size combinations; 0.5 Mb/31.5 Mb, 4 Mb/28 Mb, 8 Mb/24 Mb, 16 Mb/16 Mb. The standard MBM29DL32XTD/BD offer access times 80 ns, 90 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29DL32XTD/BD are pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Wri.


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