AP2422GY

AP2422GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS compliant 2928-8 D2 D2 D1 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 G1 S1 30V 40mΩ 4.8A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G1 D1 D2 G2 S1 S2 The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ www.DataSheet4U.com I @T =70℃ D A Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±12 4.8 3.8 20 1.39 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ IDM PD@TA=25℃ TSTG TJ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200816053-1/4 AP2422GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 0.5 - Typ. 0.02 9 3 1.3 4 10 11 17 5 480 90 70 1.5 Max. Units 32 40 60 1.2 1 10 ±100 5 770 2.3 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF...