High Power GaAs FET
FLL21E060IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at...
Description
FLL21E060IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability
DESCRIPTION
The FLL21E060IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING Item
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Symbol
VDS VGS PT T stg T ch
Condition T C=25 C
(Case Tem perature)
o
Rating 32 -3 102 65 to +175 200
o
Unit
V V W o C o C
-
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR T ch
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Condition
RG=2Ω RG=2Ω
Limit <28 <113.6 >-22.1 155
Unit
V mA mA o C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item
Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Themal Resistance
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP...
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