E-pHEMT
Product Features
• 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single ...
E-pHEMT
Product Features
500 ~ 4000MHz GaAs E-pHEMT 37dBm Output IP3 20dB Gain at 900MHz 24dBm P1 dB Single +5V Supply Pb Free / RoHS Standard
AE616
Application
Cellular, PCS, W-CDMA Systems High Linearity Drive Amplifier
Package Type: SOT-89
Description
AE616 is a drive or pre-drive amplifier designed with GaAs E-pHEMT in a low cost SOT-89 package. This E-pHEMT amplifier is designed as driver devices for infrastructure equipment in the 500~4000MHz Wireless technologies such as cellular, GSM, PCS, CDMA, W-CDMA, Wibro, Wimax.
Specifications
PARAMETER
Frequency Range Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Output 3rd Order Intercept Point (OIP3) Output 1dB compression Point (P1dB) Noise Figure DC Operating Current Operating Gate Voltage(Vds=5V, Ids=85mA)
www.DataSheet4U.comThreshold voltage
Units
MHz dB dB dB dBm dBm dB mA V V
Min
Typ
500-4000 20
Max
10 10 35 22
12 12 37 24 2.7 3.4 100
70
85 0.4
0.1
0.25
0.4
Test Condition ① 880MHz, Vds=5V, Ids=85mA at 25℃ ② OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz..
Absolute Maximum Ratings
PARAMETER
Operating Case Temperature (℃) Storage Temperature (℃) Drain-Source Voltage Drain Current Gate-Source Voltage Channel Temperature RF Input Power
Rating
-40 ~ 85 -50 ~ 125 +7V 250mA -5V ~ 1V 150℃ 25dBm
Remark
▪ Tel : 82-31-250-5011 ▪
[email protected]
▪ All specifications may change without notice. ▪ Version 1.4
E-pHEMT
AE616
Application Circuit...