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AE616

RFHIC

E-pHEMT

E-pHEMT Product Features • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single ...


RFHIC

AE616

File Download Download AE616 Datasheet


Description
E-pHEMT Product Features 500 ~ 4000MHz GaAs E-pHEMT 37dBm Output IP3 20dB Gain at 900MHz 24dBm P1 dB Single +5V Supply Pb Free / RoHS Standard AE616 Application Cellular, PCS, W-CDMA Systems High Linearity Drive Amplifier Package Type: SOT-89 Description AE616 is a drive or pre-drive amplifier designed with GaAs E-pHEMT in a low cost SOT-89 package. This E-pHEMT amplifier is designed as driver devices for infrastructure equipment in the 500~4000MHz Wireless technologies such as cellular, GSM, PCS, CDMA, W-CDMA, Wibro, Wimax. Specifications PARAMETER Frequency Range Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Output 3rd Order Intercept Point (OIP3) Output 1dB compression Point (P1dB) Noise Figure DC Operating Current Operating Gate Voltage(Vds=5V, Ids=85mA) www.DataSheet4U.comThreshold voltage Units MHz dB dB dB dBm dBm dB mA V V Min Typ 500-4000 20 Max 10 10 35 22 12 12 37 24 2.7 3.4 100 70 85 0.4 0.1 0.25 0.4 Test Condition ① 880MHz, Vds=5V, Ids=85mA at 25℃ ② OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz.. Absolute Maximum Ratings PARAMETER Operating Case Temperature (℃) Storage Temperature (℃) Drain-Source Voltage Drain Current Gate-Source Voltage Channel Temperature RF Input Power Rating -40 ~ 85 -50 ~ 125 +7V 250mA -5V ~ 1V 150℃ 25dBm Remark ▪ Tel : 82-31-250-5011 ▪ [email protected] ▪ All specifications may change without notice. ▪ Version 1.4 E-pHEMT AE616 Application Circuit...




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