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APT60DS04HJ

Microsemi

Schottky Diode

APT60DS04HJ ISOTOP® Schottky Diode Full Bridge Power Module VRRM = 45V IF = 60A @ Tc = 80°C Application • • • Switch mo...


Microsemi

APT60DS04HJ

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Description
APT60DS04HJ ISOTOP® Schottky Diode Full Bridge Power Module VRRM = 45V IF = 60A @ Tc = 80°C Application Switch mode power supplies rectifier Induction heating Welding equipment Features Ultra fast recovery times Soft recovery characteristics High current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) + ~ - Benefits Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ www.DataSheet4U.com Absolute maximum ratings Symbol VR VRRM IFAV IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Rectangular, d = 0.5 Non-Repetitive Forward Surge Current t = 10ms Max ratings 45 TC = 80°C TJ = 45°C 60 600 Unit V A APT60DS04HJ – Rev 0 November, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT60DS04HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IR VF Reverse Current Forward Voltage Test Conditions VR = 45V IF = 60A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ 30 250 0.58 0.48 Max Unit mA V Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any ter...




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