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APT30DF120HJ Dataheets PDF



Part Number APT30DF120HJ
Manufacturers Microsemi
Logo Microsemi
Description Fast Diode Full Bridge Power Module
Datasheet APT30DF120HJ DatasheetAPT30DF120HJ Datasheet (PDF)

APT30DF120HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 1200V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) + ~ - Benefits • • • • • • Outstanding performance at high frequency operatio.

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APT30DF120HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 1200V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) + ~ - Benefits • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ www.DataSheet4U.com Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25°C TC = 80°C TJ = 45°C Max ratings 1200 45 30 210 A APT30DF120HJ – Rev 0 November, 2009 Unit V Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT30DF120HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 30A IF = 60A Tj = 125°C IF = 30A Tj = 25°C VR = 1200V Tj = 125°C VR = 200V Min Typ 2.5 3.2 1.8 Max 3.1 Unit V 100 500 28 µA pF Dynamic Characteristics Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 30A VR = 800V di/dt=1000A/µs IF = 30A VR = 800V di/dt = 200A/µs Test Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Min Typ 300 380 360 1700 4 8 160 2550 28 ns nC A Max Unit ns nC A www.DataSheet4U.com Thermal and package characteristics Min Typ Max 1.2 20 175 300 1.5 29.2 Unit °C/W V °C N.m g Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 www.microsemi.com 2-4 APT30DF120HJ – Rev 0 November, 2009 APT30DF120HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (°C/W) 1.2 1 0.8 0.6 0.3 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 80 IF, Forward Current (A) TJ=125°C Trr vs. Current Rate of Charge 500 400 300 45 A TJ=125°C VR=800V 60 40 200 100 0 0 200 400 600 30 A 15 A 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge TJ=125°C VR=800V 800 1000 1200 -diF/dt (A/µs) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A) 4 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) 45 A TJ=125°C VR=800V 30 A 15 A 45 A 3 30 A www.DataSheet4U.com 2 15 A 1 0 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 Capacitance vs. Reverse Voltage 200 160 C, Capacitance (pF) 80 40 0 1 10 100 VR, Reverse Voltage (V) 1000 www.microsemi.com 3-4 APT30DF120HJ – Rev 0 November, 2009 120 APT30DF120HJ SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Dimensions in Millimeters and (Inches) www.DataSheet4U.com ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APT30DF120HJ – Rev 0 November, 2009 .


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