SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
KDR552F
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low reverse curren...
SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
KDR552F
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low reverse current, Low capacitance. Small Package : TFSC.
CATHODE MARK
D
C
B A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current
)
SYMBOL VRRM VR IO IFSM Tj Tstg RATING 25 25 50 200 125 -55 125 UNIT V
F E
DIM A B C D E F
MILLIMETERS _ 0.05 1.00 + 0.80+0.10/-0.05 _ 0.05 0.60 + _ 0.05 0.30 + 0.40 MAX _ 0.05 0.13 +
V mA mA
1. ANODE 2. CATHODE
Non-repetitive Peak Surge Current (10mS) Junction Temperature Storage Temperature Range
TFSC
Marking
Type Name
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ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF IR CT IF=1mA IF=5mA VR=20V VR=1V, f=1MHz TEST CONDITION MIN. TYP. MAX. 0.33 V 0.38 0.45 2.80 A pF UNIT
2005. 5. 27
Revision No : 0
7
1/2
KDR552F
IF - V F
10 1 10
0
IR - V R
10-4
Pulse test
10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 0 0.2 0.4 0.6 0.8 10
Ta = 25 C Ta = 75 C
Reverse Current IR (A)
Forward Current IF (A)
10-5
Ta = 75 C
10-6
Ta = 25 C
10-7
10-8 0
10
20
30
40
Forward Voltage VF (V)
Reverse Current VR (V)
CT - V R
f=1MHz
Total Capacttance CT (pF)
10
1.0
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0.1 0.1 1.0 10
Reverse Current VR (V)
2005. 5. 27
Revision No : 0
2/2
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