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APT10DC120HJ

Microsemi

SiC Diode Full Bridge Power Module

APT10DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 10A @ Tc = 100°C Application • • • • Switch mo...


Microsemi

APT10DC120HJ

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Description
APT10DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 10A @ Tc = 100°C Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration + ~ ISOTOP® Benefits Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ www.DataSheet4U.com Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs Max ratings 1200 TC = 100°C TC = 25°C 10 250 Unit V A November, 2009 1-3 APT10DC120HJ – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT10DC120HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions IF = 10A Tj = 25°C Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 10A, V...




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