APTML10UM09R004T1AG

APTML10UM09R004T1AG Linear MOSFET Power Module VDSS = 100V RDSon = 09mΩ typ @ Tj = 25°C ID = 154A* @ Tc = 25°C Application Electronic load dedicated to power supplies and battery discharge testing Features Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 5/6 must be shorted together www.DataSheet4U.com Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation n Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 100 154* 115* 430 ±30 10 480 100 50 3000 Unit V A V mΩ W A mJ APTML10UM09R004T1AG – Rev 0 Tc = 25°C * Output current must be limited to 67A @ TC=25°C and 47A @ TC=80°C to not exceed the shunt specification. n In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.co...