APTML60U12R020T1AG

APTML60U12R020T1AG Linear MOSFET Power Module VDSS = 600V RDSon = 125mΩ typ @ Tj = 25°C ID = 45A* @ Tc = 25°C Application Electronic load dedicated to power supplies and battery discharge testing Features Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Pins 1/2 ; 5/6 must be shorted together Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant www.DataSheet4U.com Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation n Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 45* 33* 172 ±30 130 568 45 50 3000 Unit V A V mΩ W A mJ Tc = 25°C * Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification. n In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APTML60U12R020T1AG – Rev...