APTML100U60R020T1AG

APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application Electronic load dedicated to power supplies and battery discharge testing Features Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Pins 1/2 ; 5/6 must be shorted together www.DataSheet4U.com Absolute maximum Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant ratings Tc = 25°C Tc = 80°C Max ratings 1000 20 14 74 ±30 630 520 Unit V A V mΩ W Symbol VDSS ID IDM VGS RDSon PD Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation n n In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APTML100U60R020T1AG – Rev 0 October, 2009 Tc = 25°C APTML100U60R020T1AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Vo...