K10A60D Datasheet (data sheet) PDF





K10A60D Datasheet, TK10A60D

K10A60D   K10A60D  

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www.DataSheet4U.com TK10A60D TOSHIBA F ield Effect Transistor Silicon N Channe l MOS Type (π-MOSⅦ) TK10A60D Switch ing Regulator Applications Unit: mm • • • Low drain-source ON-resi stance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6 .0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

K10A60D Datasheet, TK10A60D

K10A60D   K10A60D  
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage D rain-gate voltage (RGS = 20 kΩ) Gate-s ource voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IA R EAR Tch Tstg Rating 600 600 ±30 10 4 0 45 363 10 4.5 150 -55 to 150 A Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) JEDEC W mJ A mJ ° C °C ― SC-67 2-10U1B Drain pow








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