2Mx32 Mobile SDRAM 90FBGA
K4S64323LF-S(D)N/U/P
CMOS SDRAM
2Mx32 Mobile SDRAM 90FBGA
(VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V)
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Revi...
Description
K4S64323LF-S(D)N/U/P
CMOS SDRAM
2Mx32 Mobile SDRAM 90FBGA
(VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V)
www.DataSheet4U.com
Revision 1.5 December 2002
Rev. 1.5 Dec 2002
K4S64323LF-S(D)N/U/P
512K x 32Bit x 4 Banks SDRAM
FEATURES
2.5V Power Supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature range (-25° C to 85 °C). Industrial Temperature range (-40° C to 85° C) for low power. 90balls FBGA( -SXXX -Pb, -DXXX -Pb Free).
CMOS SDRAM
GENERAL DESCRIPTION
The K4S64323LF is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION
Part No. K4S64323LF-S(D)N/U/P75 Max Freq. 133MHz(CL=3) *1 105MHz(CL=2) LVCMOS 90FBGA Pb (Pb Free) Interface Package
K4S64323LF-S(...
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