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2SK3582TK Dataheets PDF



Part Number 2SK3582TK
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3582TK Datasheet2SK3582TK Datasheet (PDF)

2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA °C °C 0.395±0.03 mW 0.9±0.1 Absolute Maximum Ratings (Ta=25°C) 1 Note: Using conti.

  2SK3582TK   2SK3582TK


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