2SK3589-01

2SK3589-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Outline Drawings (mm) O Š }@–¡`Œ OUT VIEW Fig.1 o ‚Q Ž}‹ î– Æ MARKING \ Ž ¦ “ à — e Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o ‚ }‹Žî– Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Tch Tstg Ratings 100 70 ±50 ±6.9 ** ±200 ±30 50 465 20 5 123 2.4 +150 Unit V V A A A V A mJ kV/µs kV/µs W W °C °C DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j ’ P ‚ .iQ jÍŽ‚@ –¡à“ l l’B é‚· Æ “à—e \Ž¦ ¤W Special specification for customer CONNECTION 11 G G :: Gate Gate Œ‹ü} D “ÁŽêi‹L† Lot No. ƒbƒgNo. Type name 22 S1 S1 :: Source1 Source1 33 S2 S2 :: Source2 Source2 4 4D D :: Drain Drain G S1 S2 Œ`–¼ Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source -55 to +150 ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad a...