R2J20653ANP

Preliminary R2J20653ANP Integrated Driver – MOS FET (DrMOS) REJ03G1849-0100 Rev.1.00 Dec 07, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Features Compliant with Intel 6 × 6 DrMOS specification Built-in power MOS FET suitable for Notebook, Desktop, Server application Low-side MOS FET with built-in SBD for lower loss and reduced ringing Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can support a number of PWM controllers High-frequency operation (above 1 MHz) possible VIN operating-voltage range: 27 V max Large average output current (Max. 35 A) Achieve low power dissipation Controllable driver: Remote on/off Low-side MOS FET disabled function for DCM operation Double thermal protection: Thermal warning & Thermal shutdown Built-in bootstrapping switch Small package: QFN40 (6 mm × 6 mm × 0.95 mm) Terminal Pb-free/Halogen-free Outline www.DataSheet4U.com Integrated Driver-MOS FET (DrMOS) QFN40 package 6 mm × 6 mm VCIN BOOT GH VIN 40 THWN Driver Pad High-side MOS Pad 1 10 11 DISBL# MOS FET Driver LSDBL# Low-side MOS Pad PWM 31 CGND VDRV GL P...