2SK3255LS

2SK3255LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications ¥ Low ON-state resistance. ¥ Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature *) : Chip Performance Shown Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time www.DataSheet4U.com Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA VDS=900V VGS=–30V VDS=10V VDS=10V ID=2.5A VDS=20V VDS=20V VDS=20V VDS=200V VGS=20V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1mA ID=2.5A VGS=10V f=1MHz f=1MHz f=1MHz ID=2.5A VDSS VGSS ID* IDP PD Tch Tstg 900 –30 5 15 35 150 --55 to –150 min 900 unit V V A A W ¡C ¡C typ max unit V A nA V S ‰ pF pF pF nC ns ns ns ns V (TC=25¡C) 2.5 2.4 250 –100 3.5 4.0 2.1 1100 115 28 44 21 43 160 47 1.5 2.8 See Specified Test Circuit IS=2.5A , VGS = 0 (Note) Be careful in handling the2SK3255LS because it has no protection diode between gate and source. Switching Time Test Circuit VDD=200V PW=1 S D.C.†0.5% ID=2.5A RL=80‰ D VOUT 3.5 7.2 Packa...