TPC8010-H

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 18 nC (typ.) Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) www.DataSheet4U.com Single pulse avalanche energy Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Rating 30 30 ±20 11 44 1.9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation W Weight: 0.080 g (typ.) 1.0 W Circuit Configuration 157 11 0.19 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 8 7 6 5 (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-03-12 TPC8010-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth...