TPC8016-H

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 ±20 15 60 1.9 W Unit V V V A JEDEC JEITA TOSHIBA ? ? 2-6J1B Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy www.DataSheet4U.com (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) PD EA S IAR EAR Tch Tstg 1.0 W Circuit Configuration 146 15 0.19 150 −55 to 150 mJ 8 7 6 5 A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-07-14 TPC8016-H Thermal Characteristics Characteristics Thermal resistance, channel to ...