TPC8025

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 11 44 1.9 Unit V V V A JEDEC JEITA ― ― 2-6J1B Drain power dissipation W TOSHIBA Weight: 0.08 g (typ.) 1.0 W 31 11 0.053 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 www.DataSheet4U.com Avalanche current Repetitive avalanche energy Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the abs...